PAN3060C Description
The PAN3060C is a 30V N-channel enhancement mode MOSFET which uses advanced trench technology to provide excellent RDS(on), low gate charge. This device is suitable for use in UPS, power switching and general purpose applications. PAN3060C is packaged in PDFN5 6 package.
PAN3060C Key Features
- VDS(max) =30V
- ID (max)=60A
- Extremely Low RDS(on)
- Good stability and uniformity
- 100% avalanche tested
- Excellent package for good heat dissipation