PAN3060C - 30V N-channel enhancement mode MOSFET

General Description

The PAN3060C is a 30V N-channel enhancement mode MOSFET which uses advanced trench technology to provide excellent RDS(on), low gate charge.

This device is suitable for use in UPS, power switching and general purpose applications.

6 package.

Key Features

VDS(max) =30V.
ID (max)=60A.
Extremely Low RDS(on): Typ. RDS(on) = 3.3 mΩ @VGS=10 V, ID=30 A.
Good stability and uniformity.
100% avalanche tested.
Excellent package for good heat dissipation.

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PAN3060C 30v n-channel enhancement mode mosfet by PSD - Datasheet Preview

Datasheet Details

Part number	PAN3060C
Manufacturer	PSD
File Size	1.60 MB
Description	30V N-channel enhancement mode MOSFET
Datasheet	PAN3060C Datasheet

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PAN3060C 30V N-channel enhancement mode MOSFET General Description The PAN3060C is a 30V N-channel enhancement mode MOSFET which uses advanced trench technology to provide excellent RDS(on), low gate charge. This device is suitable for use in UPS, power switching and general purpose applications. PAN3060C is packaged in PDFN5*6 package. Features ● VDS(max) =30V ● ID (max)=60A ● Extremely Low RDS(on): Typ.RDS(on) = 3.