PAN3060C Overview
Description
The PAN3060C is a 30V N-channel enhancement mode MOSFET which uses advanced trench technology to provide excellent RDS(on), low gate charge. This device is suitable for use in UPS, power switching and general purpose applications.
Key Features
- VDS(max) =30V
- ID (max)=60A
- Extremely Low RDS(on): (on) = 3.3 mΩ @VGS=10 V, ID=30 A
- Good stability and uniformity
- 100% avalanche tested
- Excellent package for good heat dissipation
