PAP3050 Description
Pulse width limited by maximum junction temperature 2. L = 0.1 mH, IAS =-55A, VDD = -24V, RG = 25 Ω, Starting Tj = 25°C 3. ISD ≤-30A, di/dt = 100A/us, VDD ≤ BVDSS, Staring Tj =25°C.
PAP3050 Datasheet
| Part number | PAP3050 |
|---|---|
| Download | PAP3050 Datasheet (PDF) |
| File Size | 920.00 KB |
| Manufacturer | PSD |
| Description | -30V P-channel enhancement mode MOSFET |
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