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PL2301GD - P-Channel High Density Trench MOSFET

Key Features

  • Super high dense cell trench design for low RDS(on).
  • Rugged and reliable.
  • Surface Mount package. SOT-23-3 D D S G G S.

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Datasheet Details

Part number PL2301GD
Manufacturer PULAN TECHNOLOGY
File Size 595.66 KB
Description P-Channel High Density Trench MOSFET
Datasheet download datasheet PL2301GD Datasheet

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Full PDF Text Transcription (Reference)

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PL2301GD PULAN TECHNOLOGY CO., LIMITED P-Channel High Density Trench MOSFET PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max -20V -2.2 125 @ VGS= 4.5V -1.4 170 @ VGS= 2.5V FEATURES ●Super high dense cell trench design for low RDS(on). ●Rugged and reliable. ●Surface Mount package. SOT-23-3 D D S G G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ± 8 V Drain Current-Continuousa@ TA= 25 °C b -Pulse Drain-Source Diode Forward Current a Maximum Power Dissipationa TA=25°C TA=75°C Operating Junction and Storage Temperature Range ID IDM IS PD TJ,TSTG -2.2 -6 -0.75 1.25 0.