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PULAN TECHNOLSOeGmY CiOc.,oLnIMdITuEcDtor CO.,LTD
P L2302GD
PULAN
18948314942 QQ:1094642907
N-Channel High Density Trench MOSFET
PRODUCT SUMMARY
VDSS
ID RDS(on) (m-ohm) Max
3.0 65 @ VGS = 4.5V 20V
2.0 90 @ VGS = 2.5V
FEATURES
●Super high dense cell trench design for low RDS(on). ●Rugged and reliable. ●Surface Mount package.
SOT-23-3
D
D
S G
G S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage
Drain Current-Continuousa @ TA = 25 °C -Pulse b
a
Drain-Source Diode Forward Current
Maximum Power Dissipation a
TA=25°C TA=75°C
Operating Junction and Storage Temperature Range
Symbol
VDS VGS ID IDM IS PD
TJ,TSTG
Limit
20 ±12
3 9 1 1.25 0.
PL2302GD Datasheet
