FEATURES
Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 60 mA Active Current - 300 µA Standby Current Fast Write Cycle Times PYA28C256 32K x 8 EEPROM Software Data Protection CMOS & TTL Compatible Inputs and Outputs Endurance: - 10,000 Write Cycles - 100,000 Write Cycles (optional) Data Retention: 10 Years Available in the following package: – 28-Pin 600 mil Ceramic DIP – 32-Pin Ceramic LCC (450x550 mils) DESCRIPTION
The PYA28C256 is a 5 Volt 32Kx8 EEPROM. The device supports 64-byte page write operation. The device also includes user-optional software data protection. Data Retention is 10 Years. The device is available in a 28-Pin 600 mil wide Ceramic DIP and 32-Pin LCC. Functional Block Diagram Pin Configuration Document # EEPROM104 REV 03 DIP (C5-1) LCC (L6) Revised July 2014 PYA28C256 - 32K x 8 EEPROM OPERATION READ Read operations are initiated by both OE and CE LOW. The read operation is terminated by either CE or OE returning HIGH.
PYRAMID
