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DL-100-7-KER SMD
Position Sensing Photodiodes
Special characteristics:
dual-axis, duo-lateral PSD active area 10 x 10 mm high position resolution and high linearity
Parameters:
active area Dark current at 10 V Capacitance at 10 V, 100 kHz Spectral responsivity at 633 nm at 850 nm Interelectrode resistance at E = 0 lx Rise time at 10 V, 50 Ω, 865 nm Noise limited resolution at 632 nm, 0.5 µW Position Detection Error 1) at 632 nm Breakdown voltage Package Operating temperature Storage temperature
DL-100-7-KER SMD
10 x 10 mm 100 mm2 max. 300 nA typ. 80 nA typ. 75 pF typ. 0,4 A/W typ. 0,62 A/W typ. 12 kΩ typ. 4 µs 0.2 µm
chip surface
Package 22 (SMD)
2.1± 0.15
1.0 +0.1
10.16 15.24 1.6
(2.54)
ANODE 1
1.5
CATHODE 2
0.63
Active area: (10 x 10) mm2
Ceramic S.M. -20 ... +70°C -60 ...
DL-100-7-KERSMD Datasheet
