PJ04N03D Datasheet | PanJit Semiconductor

25V N-Channel Enhancement Mode Field Effect Transistor Features - RDS(ON),VGS@10V,I DS@30A=4mΩ - RDS(ON),VGS@5.0V,I DS@24A=6mΩ - Advanced trench process technology - High Density Cell Design For Uitra Low On-Resistance - Specially Designed for DC/DC Converters and Motor Drivers - Fully Characterized Avalanche Voltage and Current - In pliance with EU RoHS 2002/95/EC directives G S D TO-252 MECHANICALDATA - Case : TO-252 Molded Plastic - Terminals : Solderable per MIL-STD-750,Method 2026 - Marking : 04N03D G D Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PARAMETER Drain-Source Voltage Gate-Source Voltage Continous Drain Current Pulsed Drain...