PJ4800 Overview
PJ4800 30V N-Channel Enhancement Mode MOSFET SOIC-08.
PJ4800 Key Features
- RDS(ON), VGS@10V,IDS@8A=20mΩ
- RDS(ON), VGS@5.0V,IDS@6A=31mΩ
- Advanced Trench Process Technology
- High Density Cell Design For Ultra Low On-Resistance
- Specially Designed for DC/DC Converters
- Fully Characterized Avalanche Voltage and Current
- Pb free product : 99% Sn above can meet RoHS environment substance directive request
- Case: SOIC-08 Package
- Terminals : Solderable per MIL-STD-750D,Method 1036.3
- Marking : 4800