PJ4812 Overview
Key Features
- RDS(ON), VGS@10V,IDS@8A=17mΩ
- RDS(ON), VGS@5.0V,IDS@6A=34mΩ
- Advanced Trench Process Technology
- High Density Cell Design For Ultra Low On-Resistance
- Specially Designed for DC/DC Converters
| Part | PJ4812 |
|---|---|
| Description | 30V N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | PanJit Semiconductor |
| Size | 288.37 KB |
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