PJ6676 Datasheet | PanJit Semiconductor

.. 25V N-Channel Enhancement Mode MOSFET Features - RDS(ON), VGS@10V,IDS@15A=8mΩ - RDS(ON), VGS@4.5V,IDS@13A=12mΩ - Advanced Trench Process Technology - High Density Cell Design For Ultra Low On-Resistance - Specially Designed for DC/DC Converters - Fully Characterized Avalanche Voltage and Current - Pb free product : 99% Sn above can meet RoHS environment substance directive request SOIC-08 MECHANICALDATA - Case: SOIC-08 Package - Terminals : Solderable per MIL-STD-750D,Method 1036.3 - Marking : 6676 PIN Assignment 8 7 6 5 1. Source 2. Source 3. Source 4. Gate 5. Drain 6. Drain 7. Drain 8. Drain Maximum RATINGS and Thermal Characteristics (TA=25OC...