PJ6676 Overview
Key Features
- RDS(ON), VGS@10V,IDS@15A=8mΩ
- RDS(ON), VGS@4.5V,IDS@13A=12mΩ
- Advanced Trench Process Technology
- High Density Cell Design For Ultra Low On-Resistance
- Specially Designed for DC/DC Converters
| Part | PJ6676 |
|---|---|
| Description | 25V N-Channel Enhancement Mode MOSFET |
| Category | MOSFET |
| Manufacturer | PanJit Semiconductor |
| Size | 173.42 KB |
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