PJ6694 Datasheet | PanJit Semiconductor

.. 25V N-Channel Enhancement Mode MOSFET Features - RDS(ON), VGS@10V,IDS@12A=12mΩ - RDS(ON), VGS@4.5V,IDS@10A=22mΩ - Advanced Trench Process Technology - High Density Cell Design For Ultra Low On-Resistance - Specially Designed for DC/DC Converters - Fully Characterized Avalanche Voltage and Current - Pb free product : 99% Sn above can meet RoHS environment substance directive request MECHANICALDATA - Case: SOIC-08 Package - Terminals : Solderable per MIL-STD-750D,Method 1036.3 - Marking : 6694 Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA M E TE R D r a i n- S o ur c e Vo l t a g e G a t e - S o ur c e Vo l t a g e C o nt i...