PJB24N10 Datasheet | PanJit Semiconductor

100V N-Channel Enhancement Mode MOSFET Features - RDS(ON), VGS@10V,IDS@30A=24mΩ - Low On Resistance - Excellent Gate Charge x RDS(ON) Product ( FOM ) - Fully Characterized Avalanche Voltage and Current - Specially Designed for AC Adapter, High-Frequency Switch and Synchronous Rectification - ponent are in pliance with EU RoHS 2002/95/EC directives MECHANICAL DATA - Case: TO-263 Molded Plastic - Terminals : Solderable per MIL-STD-750,Method 2026 Drain ORDERING INFORMATION TYPE MARKING B24N10 PACKAGE TO-263 PACKING 800PCS/REEL Gate Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA ME TE R D ra i n-S o urc e Vo lta g e...