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PJB24N10 - 100V N-CHANNEL MOSFET

Features

  • RDS(ON), VGS@10V,IDS@30A=24mΩ.
  • Low On Resistance.
  • Excellent Gate Charge x RDS(ON) Product ( FOM ).
  • Fully Characterized Avalanche Voltage and Current.
  • Specially Designed for AC Adapter, High-Frequency Switch and Synchronous Rectification.
  • Component are in compliance with EU RoHS 2002/95/EC directives.

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PJB24N10 100V N-Channel Enhancement Mode MOSFET FEATURES • RDS(ON), VGS@10V,IDS@30A=24mΩ • Low On Resistance • Excellent Gate Charge x RDS(ON) Product ( FOM ) • Fully Characterized Avalanche Voltage and Current • Specially Designed for AC Adapter, High-Frequency Switch and Synchronous Rectification • Component are in compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: TO-263 Molded Plastic • Terminals : Solderable per MIL-STD-750,Method 2026 Drain ORDERING INFORMATION TYPE PJB24N10 MARKING B24N10 PACKAGE TO-263 PACKING 800PCS/REEL Gate Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA ME TE R D ra i n-S o urc e Vo lta g e Ga te - S o urc e Vo lta g e C o nti nuo us D ra i n C urre nt P uls e d D ra i n C urre nt 1) S ymb o
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