Download PJD06N03 Datasheet PDF
PJD06N03 page 2
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PJD06N03 page 3
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PJD06N03 Key Features

  • RDS(ON), VGS@10V,IDS@30A=6mΩ
  • RDS(ON), VGS@4.5V,IDS@30A=9mΩ
  • Advanced trench process technology
  • High Density Cell Design For Uitra Low On-Resistance
  • Specially Designed for DC/DC Converters and Motor Drivers
  • Fully Characterized Avalanche Voltage and Current
  • Pb free product : 99% Sn above can meet RoHS environment substance directive request
  • Case: TO-252 Molded Plastic
  • Terminals : Solderable per MIL-STD-750,Method 2026
  • Marking : 06N03

PJD06N03 Description

PJD06N03 25V N-Channel Enhancement Mode MOSFET TO-252.