PJD06N03 Overview
Key Features
- RDS(ON), VGS@10V,IDS@30A=6mΩ
- RDS(ON), VGS@4.5V,IDS@30A=9mΩ
- Advanced trench process technology
- High Density Cell Design For Uitra Low On-Resistance
- Specially Designed for DC/DC Converters and Motor Drivers
| Part | PJD06N03 |
|---|---|
| Description | N-Channel Enhancement Mode MOSFET |
| Category | MOSFET |
| Manufacturer | PanJit Semiconductor |
| Size | 169.34 KB |
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