PJD80N06 Datasheet | PanJit Semiconductor

PPJD80N06 60V N-Channel Enhancement Mode MOSFET Voltage 60 V Current 80 A Features - RDS(ON) , VGS@10V, ID@20A<7mΩ - High switching speed - Improved dv/dt capability - Low reverse transfer capacitance - Lead free in pliance with EU RoHS 2011/65/EU directive. - Green molding pound as per IEC61249 Std. (Halogen Free) Mechanical Data - Case : TO-252 Package - Terminals : Solderable per MIL-STD-750, Method 2026 - Approx. Weight : 0.0104 ounces, 0.297grams TO-252 Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TC=25oC TC=100oC Pulsed Drain Current (Note...