PJD80N06 Overview
PPJD80N06 60V N-Channel Enhancement Mode MOSFET Voltage 60 V Current 80.
PJD80N06 Key Features
- RDS(ON) , VGS@10V, ID@20A<7mΩ
- High switching speed
- Improved dv/dt capability
- Low reverse transfer capacitance
- Lead free in pliance with EU RoHS 2011/65/EU
- Green molding pound as per IEC61249 Std
- Case : TO-252 Package
- Terminals : Solderable per MIL-STD-750, Method 2026
- Approx. Weight : 0.0104 ounces, 0.297grams
- Limited only By Maximum Junction Temperature