PJF2N60 Overview
Key Features
- 2A , 600V, RDS(ON)=4.6Ω@VGS=10V, ID=1A
- Low ON Resistance
- Fast Switching
- Low Gate Charge
- Fully Characterized Avalanche Voltage and Current
| Part | PJF2N60 |
|---|---|
| Description | 600V N-Channel Enhancement Mode MOSFET |
| Category | MOSFET |
| Manufacturer | PanJit Semiconductor |
| Size | 228.94 KB |
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