PJF7NA80 - 800V N-Channel MOSFET

PanJit Semiconductor

Key Features

RDS(ON), VGS@10V,ID@ 3.5A.

PJF7NA80 800v n-channel mosfet by PanJit Semiconductor - Datasheet Preview

Datasheet Details

Part number	PJF7NA80
Manufacturer	PanJit Semiconductor
File Size	306.17 KB
Description	800V N-Channel MOSFET
Datasheet	PJF7NA80 Datasheet

Other Datasheets by PanJit Semiconductor

Part Number	Description
PJF7N60	600V N-Channel Enhancement Mode MOSFET
PJF7N65	650V N-Channel Enhancement Mode MOSFET
PJF730	400V N-Channel Enhancement Mode MOSFET
PJF10N60	600V N-Channel Enhancement Mode MOSFET
PJF10N65	650V N-Channel Enhancement Mode MOSFET
PJF12N65	650V N-Channel Enhancement Mode MOSFET
PJF13N50	500V N-Channel Enhancement Mode MOSFET
PJF24N10	100V N-Channel Enhancement Mode MOSFET
PJF2N60	600V N-Channel Enhancement Mode MOSFET
PJF2N70	700V N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

PPJP7NA80 / PJF7NA80 800V N-Channel MOSFET Voltage 800 V Current 7A Features  RDS(ON), VGS@10V,ID@ 3.5A<1.55Ω  High switching speed  Improved dv/dt capability  Low Gate Charge  Low reverse transfer capacitance  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case: TO-220AB, ITO-220AB-F Package  Terminals : Solderable per MIL-STD-750, Method 2026  TO-220AB Approx. Weight : 0.067 ounces, 1.89 grams  ITO-220AB-F Approx. Weight : 0.