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PJF8N60 - 600V N-Channel Enhancement Mode MOSFET

Features

  • 8A , 600V, RDS(ON)=1.2Ω@VGS=10V, ID=4.0A.
  • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance with EU RoHs 2002/95/EC Directives TO-220AB / ITO-220AB TO-220AB ITO-220AB 1 2 G 3 D S 1 2 G 3 S D.

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Datasheet Details

Part number PJF8N60
Manufacturer PanJit Semiconductor
File Size 195.75 KB
Description 600V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet PJF8N60 Datasheet
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PJP8N60 / PJF8N60 600V N-Channel Enhancement Mode MOSFET FEATURES • 8A , 600V, RDS(ON)=1.2Ω@VGS=10V, ID=4.
Published: |