PJP13N50 Description
PJP13N50 / PJF13N50 500V N-Channel Enhancement Mode MOSFET.
PJP13N50 Key Features
- 13A , 500V, RDS(ON)=0.52Ω@VGS=10V, ID=6.5A
- Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened f
- Case: TO-220AB / ITO-220AB Molded Plastic
- Terminals : Solderable per MIL-STD-750,Method 2026
- 4 .0 0.52 1 +1 0 0
- VDD=250V , I D =6A VGS=10V , RG=25Ω
- 450 5 .0
- A A V ns uC