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PJP13N50 - 500V N-Channel Enhancement Mode MOSFET

Key Features

  • 13A , 500V, RDS(ON)=0.52Ω@VGS=10V, ID=6.5A.
  • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance with EU RoHs 2002/95/EC Directives TO-220AB / ITO-220AB TO-220AB ITO-220AB 1 2 G 3 D S 1 2 G 3 D S.

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Full PDF Text Transcription for PJP13N50 (Reference)

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PJP13N50 / PJF13N50 500V N-Channel Enhancement Mode MOSFET FEATURES • 13A , 500V, RDS(ON)=0.52Ω@VGS=10V, ID=6....

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10V, ID=6.