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PJP1NA80 - 800V N-Channel MOSFET

Key Features

  • RDS(ON), VGS@10V,ID@0.5A.

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Full PDF Text Transcription for PJP1NA80 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for PJP1NA80. For precise diagrams, and layout, please refer to the original PDF.

PPJW1NA80 / PJU1NA80 / PJD1NA80 / PJP1NA80 800V N-Channel MOSFET Voltage 800 V Current 1A Features  RDS(ON), VGS@10V,ID@0.5A<16Ω  High switching speed  Improved dv/dt ...

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RDS(ON), VGS@10V,ID@0.5A<16Ω  High switching speed  Improved dv/dt capability  Low Gate Charge  Low reverse transfer capacitance  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free) TO-220AB SOT-223 TO-252 TO-251AB Mechanical Data  Case : TO-251AB ,TO-220AB, SOT-223, TO-252 Package  Terminals : Solderable per MIL-STD-750, Method 2026  TO-251AB Approx. Weight : 0.0104 ounces, 0.297grams  TO-220AB Approx. Weight : 0.067 ounces, 1.89 grams  SOT-223 Approx. Weight : 0.043 ounces, 0.123grams  TO-252 Approx. Weight : 0.0104 ounces, 0.