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PJP24N10 - 100V N-Channel Enhancement Mode MOSFET

Features

  • RDS(ON), VGS@10V,IDS@30A=24mΩ.
  • Low On Resistance.
  • Excellent Gate Charge x RDS(ON) Product ( FOM ).
  • Fully Characterized Avalanche Voltage and Current.
  • Specially Designed for AC Adapter, High-Frequency Switch and Synchronous Rectification.
  • Component are in compliance with EU RoHS 2002/95/EC directives 1 2 G 3 D S 1 2 G 3 S D TO-220AB / ITO-220AB TO-220AB ITO-220AB.

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Datasheet Details

Part number PJP24N10
Manufacturer PanJit Semiconductor
File Size 209.45 KB
Description 100V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet PJP24N10 Datasheet
Additional preview pages of the PJP24N10 datasheet.

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Full PDF Text Transcription

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PJP24N10 / PJF24N10 100V N-Channel Enhancement Mode MOSFET FEATURES • RDS(ON), VGS@10V,IDS@30A=24mΩ • Low On Resistance • Excellent Gate Charge x RDS(ON) Product ( FOM ) • Fully Characterized Avalanche Voltage and Current • Specially Designed for AC Adapter, High-Frequency Switch and Synchronous Rectification • Component are in compliance with EU RoHS 2002/95/EC directives 1 2 G 3 D S 1 2 G 3 S D TO-220AB / ITO-220AB TO-220AB ITO-220AB INTERNAL SCHEMATIC DIAGRAM MECHANICAL DATA • Case: TO-220AB / ITO-220AB Molded Plastic • Terminals : Solderable per MIL-STD-750,Method 2026 Drain ORDERING INFORMATION TYPE PJP24N10 PJF24N10 MARKING P24N10 F24N10 PACKAGE TO-220AB ITO-220AB PACKING 50PCS/TUBE 50PCS/TUBE Gate Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwis
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