PJP24N10 Description
PJP24N10 / PJF24N10 100V N-Channel Enhancement Mode MOSFET.
PJP24N10 Key Features
- RDS(ON), VGS@10V,IDS@30A=24mΩ
- Low On Resistance
- Excellent Gate Charge x RDS(ON) Product ( FOM )
- Fully Characterized Avalanche Voltage and Current
- Specially Designed for AC Adapter, High-Frequency Switch and Synchronous Rectification
- ponent are in pliance with EU RoHS 2002/95/EC directives
- Case: TO-220AB / ITO-220AB Molded Plastic
- Terminals : Solderable per MIL-STD-750,Method 2026
- 4 .0 24 1 +1 0 0
- t C C C