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PJP2N60 - 600V N-Channel Enhancement Mode MOSFET

Key Features

  • 2A , 600V, RDS(ON)=4.6Ω@VGS=10V, ID=1A.
  • Low ON Resistance.
  • Fast Switching.
  • Low Gate Charge.
  • Fully Characterized Avalanche Voltage and Current.
  • Specially Desigened for AC Adapter, Battery Charge and SMPS.
  • In compliance with EU RoHs 2002/95/EC Directives TO-220AB / ITO-220AB TO-220AB ITO-220AB 1 2 G 3 D S 1 2 G 3 S D.

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Full PDF Text Transcription for PJP2N60 (Reference)

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PJP2N60 / PJF2N60 600V N-Channel Enhancement Mode MOSFET FEATURES • 2A , 600V, RDS(ON)=4....

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