PJP6000 Overview
PJP6000 60V N-Channel Enhancement Mode MOSFET.
PJP6000 Key Features
- RDS(ON), VGS@10V,IDS@30A=14mΩ
- Advanced Trench Process Technology
- High Density Cell Design For Ultra Low On-Resistance
- Specially Designed for Converters and Power Motor Controls
- Fully Characterized Avalanche Voltage and Current
- In pliance with EU RoHS 2002/95/EC directives
- Case: TO-220AB Molded Plastic
- Terminals : Solderable per MIL-STD-750,Method 2026
- Marking : P6000
- S o ur c e Vo l t a g e C o nt i nuo us D r a i n C ur r e nt P ul s e d D r a i n C ur r e nt