Download PJP6000 Datasheet PDF
PJP6000 page 2
Page 2
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PJP6000 Key Features

  • RDS(ON), VGS@10V,IDS@30A=14mΩ
  • Advanced Trench Process Technology
  • High Density Cell Design For Ultra Low On-Resistance
  • Specially Designed for Converters and Power Motor Controls
  • Fully Characterized Avalanche Voltage and Current
  • In pliance with EU RoHS 2002/95/EC directives
  • Case: TO-220AB Molded Plastic
  • Terminals : Solderable per MIL-STD-750,Method 2026
  • Marking : P6000
  • S o ur c e Vo l t a g e C o nt i nuo us D r a i n C ur r e nt P ul s e d D r a i n C ur r e nt

PJP6000 Description

PJP6000 60V N-Channel Enhancement Mode MOSFET.