PJP730 Description
PJP730 / PJF730 400V N-Channel Enhancement Mode MOSFET.
PJP730 Key Features
- 5.5A , 400V, RDS(ON)=0.95Ω@VGS=10V, ID=3.0A
- Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened f
- Case: TO-220AB / ITO-220AB Molded Plastic
- Terminals : Solderable per MIL-STD-750,Method 2026
- 4 .0 0.95 10 +1 0 0
- t d (o n) tr t d (o ff) tf C C C
- 220 2 .0
- A A V ns uC