PJP75N75 Overview
PJP75N75 75V N-Channel Enhancement Mode MOSFET.
PJP75N75 Key Features
- RDS(ON), VGS@10V,IDS@30A=11mΩ
- Advanced Trench Process Technology
- High Density Cell Design For Ultra Low On-Resistance
- Specially Designed for Converters and Power Motor Controls
- Fully Characterized Avalanche Voltage and Current
- In pliance with EU RoHS 2002/95/EC directives
- Case: TO-220AB Molded Plastic
- Terminals : Solderable per MIL-STD-750,Method 2026
- Marking : P75N75
- 55 to +150