PJP7N65 Description
PJP7N65 / PJF7N65 650V N-Channel Enhancement Mode MOSFET.
PJP7N65 Key Features
- 7A , 650V, RDS(ON)=1.4Ω@VGS=10V, ID=3.5A
- Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened f
- Case: TO-220AB / ITO-220AB Molded Plastic
- Terminals : Solderable per MIL-STD-750,Method 2026
- 4 .0 1.4 10 +1 0 0
- VDD=325V, I D =7A V GS =1 0 V, RG=25Ω
- 365 3 .4
- A A V ns uC