PJP830 Description
PJP830 / PJF830 500V N-Channel Enhancement Mode MOSFET.
PJP830 Key Features
- 4.5A , 500V, RDS(ON)=1.5Ω@VGS=10V, ID=2.5A
- Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened f
- Case: TO-220AB / ITO-220AB Molded Plastic
- Terminals : Solderable per MIL-STD-750,Method 2026
- 4 .0 1.5 10 +1 0 0
- VDD=250V , I D =4.5A VGS=10V , RG=25Ω
- 250 2 .2
- A A V ns uC