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PJQ2800 - N-Channel Enhancement Mode MOSFET

Datasheet Summary

Features

  • RDS(ON) , VGS@4.5V, ID@5.2A.

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Datasheet preview – PJQ2800

Datasheet Details

Part number PJQ2800
Manufacturer Pan Jit International
File Size 287.96 KB
Description N-Channel Enhancement Mode MOSFET
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Full PDF Text Transcription

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PPJQ2800 20V N-Channel Enhancement Mode MOSFET Voltage 20 V Current 5.2A Features  RDS(ON) , VGS@4.5V, ID@5.2A<32mΩ  RDS(ON) , VGS@2.5V, ID@3.2A<45mΩ  RDS(ON) , VGS@1.8V, ID@2.0A<65mΩ  Advanced Trench Process Technology  High density cell design for ultra low on-resistance  ESD Protected  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case: DFN2020-6L Package  Terminals : Solderable per MIL-STD-750, Method 2026  Approx. Weight: 0.00032 ounces, 0.
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