PJQ2888 Overview
PPJQ2888 20V P-Channel Enhancement Mode MOSFET with TVS Diode Voltage -20 V Current -1.5A DFN2020-8L.
PJQ2888 Key Features
- RDS(ON) , VGS@-4.5V, ID@-1.5A<325mΩ
- RDS(ON) , VGS@-2.5V, ID@-1.2A<420mΩ
- RDS(ON) , VGS@-2.5V, ID@-0.5A<600mΩ
- Advanced Trench Process Technology
- Specially Designed for Switch Load, PWM Application, etc
- ESD Protected 2KV HBM
- Lead free in pliance with EU RoHS 2011/65/EU directive
- Green molding pound as per IEC61249 Std
- Case : DFN2020-8L Package
- Terminals : Solderable per MIL-STD-750, Method 2026