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PJQ2888 Description

PPJQ2888 20V P-Channel Enhancement Mode MOSFET with TVS Diode Voltage -20 V Current -1.5A DFN2020-8L.

PJQ2888 Key Features

  • RDS(ON) , VGS@-4.5V, ID@-1.5A<325mΩ
  • RDS(ON) , VGS@-2.5V, ID@-1.2A<420mΩ
  • RDS(ON) , VGS@-2.5V, ID@-0.5A<600mΩ
  • Advanced Trench Process Technology
  • Specially Designed for Switch Load, PWM Application, etc
  • ESD Protected 2KV HBM
  • Lead free in pliance with EU RoHS 2011/65/EU directive
  • Green molding pound as per IEC61249 Std
  • Case : DFN2020-8L Package
  • Terminals : Solderable per MIL-STD-750, Method 2026