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PJQ2888 - P-Channel Enhancement Mode MOSFET

Key Features

  • RDS(ON) , VGS@-4.5V, ID@-1.5A.

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PPJQ2888 20V P-Channel Enhancement Mode MOSFET with TVS Diode Voltage -20 V Current -1.5A DFN2020-8L Features  RDS(ON) , VGS@-4.5V, ID@-1.5A<325mΩ  RDS(ON) , VGS@-2.5V, ID@-1.2A<420mΩ  RDS(ON) , VGS@-2.5V, ID@-0.5A<600mΩ  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc.  ESD Protected 2KV HBM  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case : DFN2020-8L Package  Terminals : Solderable per MIL-STD-750, Method 2026  Approx. Weight : 0.00032 ounces, 0.