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PJS6401 - P-Channel Enhancement Mode MOSFET

Key Features

  • RDS(ON) , VGS@-10V, ID@-4.6A.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PPJS6401 30V P-Channel Enhancement Mode MOSFET Voltage -30 V Current -4.6A Features  RDS(ON) , VGS@-10V, ID@-4.6A<71mΩ  RDS(ON) , VGS@-4.5V, ID@-3.3A<81mΩ  RDS(ON) , VGS@-2.5V, ID@-1.8A<110mΩ  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case: SOT-23 6L-1 Package  Terminals: Solderable per MIL-STD-750, Method 2026  Approx. Weight: 0.0005 ounces, 0.