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PJS6415AE - P-Channel MOSFET

Key Features

  • RDS(ON) , VGS@-10V, ID@-4.9A.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PPJS6415AE 20V P-Channel Enhancement Mode MOSFET – ESD Protected Voltage -20 V Current -4.9A SOT-23 6L-1 Features  RDS(ON) , VGS@-10V, ID@-4.9A<60mΩ  RDS(ON) , VGS@-4.5V, ID@-4.2A<70mΩ  RDS(ON) , VGS@-2.5V, ID@-3.1A<96mΩ  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc  ESD Protected 2KV HBM  Lead free in comply with EU RoHS 2011/65/EU directives.  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case: SOT-23 6L-1 Package  Terminals : Solderable per MIL-STD-750, Method 2026  Approx. Weight: 0.0003 ounces, 0.