PJS6413 Datasheet | PanJit Semiconductor

Features - RDS(ON) , VGS@-4.5V, ID@-4.4A<82mΩ - RDS(ON) , VGS@-2.5V, ID@-2.8A<110mΩ - RDS(ON) , VGS@-1.8V, ID@-1.5A<146mΩ - Advanced Trench Process Technology - Specially Designed for Switch Load, PWM Application, etc - Lead free in pliance with EU Ro HS 2.0 - Green molding pound as per IEC 61249 standard Mechanical Data - Case: SOT-23 6L Package - Terminals: Solderable per MIL-STD-750, Method 2026 - Approx. Weight: 0.0005 ounces, 0.014 grams - Marking: S13 SOT-23 6L Unit : inch(mm) Maximum Ratings and Thermal Characteristics (TA=25o C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Ta=25o C Derate above 25o C Operating Junction and Storage Temperature Range Typical Thermal Resistance - Junction to Ambient(Note 3) SYMBOL VDS VGS ID IDM TJ,TSTG RθJA LIMIT -20 +12 -4.4 -17.6 2 16 -55~150 UNITS V V A A W m W/ o C o C o C/W January 20,2022 PJS6413-REV.05 Page 1 Electrical Characteristics (TA=25o C unless otherwise noted) PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Drain-Source Diode Maximum Continuous Drain-Source Diode Forward Current SYMBOL BVDSS...