PJSD24TG Datasheet | PanJit Semiconductor

FEATURES - 100 Watts peak pules power( tp=8/20µs) - Small package for use in portable electronics - Suitable replacement for MLV’S in ESD protection applications - Low clamping voltage and leakage current - In pliance with EU Ro HS 2002/95/EC directives 3~36 Volts POWER 100 Watts APPLICATIONS - Case: SOD-723 plastic - Terminals : Solderable per MIL-STD-750,Method 2026 - Approx.Weight : 0.00077 gram - Marking : PJSD03TG : FS PJSD05TG : FT PJSD08TG : FU PJSD12TG : FV PJSD15TG : FW PJSD24TG : FX PJSD36TG : FY MAXIMUM RATINGS AND ELECTRICAL CHATACTERISTICS ABSOLUTE MAXIMUM RATING Rating Peak Pulse Power (tp=8/20 µs) ESD Voltage Operating Temperature Storage Temperature ELECTRICAL CHARA CTERISTICS Symbol Value 100 25 -50 to 150 -50 to 150 Units W KV P PK V ESD TJ TSTG PJSD03TG Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Symbol VRWM V BR IR VC CJ CJ Conditions IBR=1m A VR=3.3V IPP=10A 0Vdc Bias=f=1MHz 3Vdc Bias=f=1MHz Min. 4 Typical 180 100 Max. 3.3 125 7.5 Units V V µA V p F p F .. Clamping Voltage(8/20 µs) Off State Junction Capacitance Off State Junction Capacitance REV.0.1-FEB.16.2009 PAGE . 1 PJSD03TG~PJSD36TG PJSD05TG Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage(8/20 µs) Off State Junction Capacitance Off State Junction Capacitance Symbol VR W M VB R IR VC CJ CJ Conditions IB R =1m A VR =5V IP P =8.5 A 0Vdc Bias=f=1MHz 5Vdc Bias=f=1MHz Min. 6 Typical 65 Max. 5 10 Units V V µA V p F p F 9.8 110 - PJSD08TG Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage(8/20 µs) Off State Junction Capacitance Off State Junction Capacitance Symbol VR W M VB R IR VC CJ CJ Conditions IB R =1m A VR =8V IP P =7.5 A 0Vdc Bias=f=1MHz 8Vdc Bias=f=1MHz Min. 8.5 Typical Max. 8 10 13.4 Units V V µA V p F p F - PJSD12TG Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping...