PJSD24W Datasheet | PanJit Semiconductor

FEATURES - 350 Watts peak pules power( tp=8/20μs) - Small package for use in portable electronics - Suitable replacement for MLV’S in ESD protection applications - Low clamping voltage and leakage current - In pliance with EU Ro HS 2002/95/EC directives 3~36 Volts POWER 350 Watts APPLICATIONS - Case: SOD-323 plastic - Terminals : Solderable per MIL-STD-750,Method 2026 - Polarity : Color band cathode - Apporx. Weight: 0.0001 ounce, 0.0041 gram Cathode Anode MAXIMUM RATINGS AND ELECTRICAL CHATACTERISTICS ABSOLUTE MAXIMUM RATING Rating Peak Pulse Power (tp=8/20 μs) ESD Voltage Operating Temperature Storage Temperature Symbol PPK VESD TJ TSTG Value 350 25 -50 to 150 -50 to 150 Units W KV .. August 12.2010-Rev.00 PAGE . 1 PJSD03W~PJSD36W PJSD03W Marking 03W Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage(8/20 μs) Off State Junction Capacitance Off State Junction Capacitance PJSD05W Marking 05W Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage(8/20 μs) Off State Junction Capacitance Off State Junction Capacitance PJSD08W Marking 08W Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage(8/20 μs) Off State Junction Capacitance Off State Junction Capacitance PJSD12W Marking 12W Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage(8/20 μs) Off State Junction Capacitance Symbol VRWM VBR IR VC CJ CJ Conditions I BR=1m A VR=12V I PP=1A 0Vdc Bias=f=1MHz 5Vdc Bias=f=1MHz Min. 13.3 Typical 130 50 Max. 12 15 1 19 Units V V μA V p F p F Symbol VRWM VBR IR VC CJ CJ Conditions I BR=1m A VR=3.0V I PP=1A 0Vdc Bias=f=1MHz 5Vdc Bias=f=1MHz Min. 4 - Typical 450 150 Max. 3.0 5.0 125 6.5 - Units V V μA V p F p F Symbol VRWM VBR IR VC CJ CJ Conditions I BR=1m A VR=5V I PP=1A 0Vdc Bias=f=1MHz 5Vdc Bias=f=1MHz Min....