PJSMS05 Datasheet | PanJit Semiconductor

FEATURES TVSZENER - Improved Low Leakage Current, Maximum of 5µA @ 5Vdc APPLICATIONS - SIM Card Port (Mobile Phones) - Personal Digital Assistant (PDA's) - Serial or Parallel Ports in PC's (RS-485, Centronics, RS232C, etc) - Portable Instrumentation - Microprocessor Interface Ports 1 2 3 SOT23-6L MAXIMUM RATINGS Rating Peak Pulse Power (8x20µsec Waveform) Peak Pulse Current 8x20µsec ESD Voltage (HBM) Operating Temperature Range Storage Temperature Range Symbol P pk Ipp Vesd TL Tstg Value 350 24 >25 -55 to +125 -55 to +150 Units W A k V ELECTRICAL CHARACTERISTICS Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage Clamping Voltage Off-State Junction Capacitance Symbol VWRM VBR IR Vc Vc Cj IBR = 1m A VRWM = 5V TA = 25OC Ipp = 5A 8 x 20 µsec Ipp = 24A 8 x 20 µsec Vdc = 0V, f = 1MHz Between I/O Pins and Gnd (Pin 2 or 5) Vdc = 5V, f = 1MHz Between I/O Pins and Gnd (Pin 2 or 5) 6 5 9.5 13 200 Conditions Min. Typical Max. 5 Units Volts Volts µA Volts Volts p F Off-State Junction Capacitance Cj 110 p F DATE : DEC.16.2002 PAGE 1 .. 26 8x20 m sec Peak Current, Amps Capacitance, p F PRELIMINARY RATING AND CHARACTERISTIC CURVES 110 100 90 80 24 22 20 Percent of Ipp 16 14 12 10 8 6 4 2 0 6 8 10 12 14 16 TA = 25 C 70 60 50 40 30 20 10 0 0 Rise time 10-90% - 8 m s 50% of Ipp @ 20 m...