PJSMS15 Datasheet | PanJit Semiconductor

FEATURES 350W Power Dissipation (8/20µs Waveform) Low Leakage Current, Maximum of 5µA at rated voltage Very Low Clamping Voltage .. IEC61000-4-2 ESD 20k V air, 15k V Contact pliance Industry Standard Surface Mount Package SOT23-6L 100% Tin Matte Finish (Ro HS pliance) APPLICATIONS 1 2 3 Personal Digital Assistant (PDA) SIM Card Port Protection (Mobile Phone) Portable Instrumentation Mobile Phones and Accessories Memory Card Port Protection TVS PJSMS05 PJSMS12 PJSMS15 PJSMS24 Symbol P pp V ESD TJ Tstg Value 350 >25 SOT23-6L MAXIMUM RATINGS (Per Device) Rating Peak Pulse Power (8/20µs Waveform) ESD Voltage (HBM) Operating Temperature Range Storage Temperature Range Marking Code M05 M12 M15 M24 Units W k V °C °C -50 to +125 -50 to +150 ELECTRICAL CHARACTERISTICS (Per Device) Tj = 25°C PJSMS05 Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage (8/20µs) Clamping Voltage (8/20µs) Off State Junction Capacitance Off State Junction Capacitance Symbol VWRM VBR IR Vc Vc Cj Cj I BR = 1m A VR = 5V I pp = 5A I pp = 24A 0 Vdc Bias f = 1MHz Between I/O pins and pin 2, 5 5 Vdc Bias f = 1MHz Between I/O pins and pin 2, 5 Conditions Min Typical Max 5 Units V V 6 5 9.8 13 225 125 µA V V p F p F 5/11/2006 Page .panjit. PJSMS05 SERIES ELECTRICAL CHARACTERISTICS (Per Device) Tj = 25°C PJSMS12 Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage (8/20µs) .. Clamping Voltage...