Datasheet Summary
PJP1N80 / PJU1N80
800V N-Channel Enhancement Mode MOSFET
Features
- 1A, 800V, RDS(ON)=16Ω@VGS=10V, ID=0.5A
- -
- -
- - Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In pliance with EU RoHs 2002/95/EC Directives
TO-220AB/TO-251 TO-220AB
TO -251
3 23 12 D S 1 G
1 D
2 2
3 3
MECHANICAL DATA
- Case: TO-220AB / TO-251 Molded Plastic
- Terminals : Solderable per MIL-STD-750,Method 2026
INTERNAL SCHEMATIC DIAGRAM
Drain
ORDERINGINFORMATION
TYPE
PJP1N80 PJU1N80
MARKING
P1N80 U1N80
PACKAGE
TO-220AB TO-251
PACKING
50PCS/TUBE 80PCS/TUBE
Gate Source
Maximum RATINGS and...