2N7002K Datasheet | PanJit Semiconductor

FEATURES - RDS(ON), VGS@10V,IDS@500m A=3Ω - RDS(ON), VGS@4.5V,IDS@200m A=4Ω - Advanced Trench Process Technology - High Density Cell Design For Ultra Low On-Resistance - Very Low Leakage Current In Off Condition - Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc. - ESD Protected 2KV HBM - In pliance with EU Ro HS 2002/95/EC directives MECHANICALDATA - Case: SOT-23 Package - Terminals : Solderable per MIL-STD-750,Method 2026 - Marking : K72 - Approx. Weight: 0.008gram Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PARAMETER S ym b o l Drain-Source Voltage V DS Gate-Source Voltage V GS Continuous Drain Current Pulsed Drain Current 1) Maximum Power Dissipation TA= 2 5 OC TA= 7 5 OC Op e r a ti ng J unc ti o n a nd S to r a g e Te m p e r a tur e Range Junction-to Ambient Thermal Resistance(PCB mounted)2 ID M PD TJ,TSTG R θJ A Limit 60 +20 2000 350 210 -55 to + 150 Uni ts V V m A m A m W OC OC /W Note: 1. Maximum DC current limited by the package 2. Surface mounted on FR4 board, t < 5 sec PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE REV.0.1-FEB.3.2009...