• Part: F10N60
  • Description: 600V N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: PanJit Semiconductor
  • Size: 264.30 KB
Download F10N60 Datasheet PDF
PanJit Semiconductor
F10N60
F10N60 is 600V N-Channel Enhancement Mode MOSFET manufactured by PanJit Semiconductor.
FEATURES - 10A , 600V, R DS(ON)=1.0Ω@VGS=10V, ID=5.0A - - - - - - Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In pliance with EU Ro Hs 2002/95/EC Directives TO-220AB / ITO-220AB TO-220AB ITO-220AB 2 G 3 D 2 G 3 S D MECHANICAL DATA - Case: TO-220AB / ITO-220AB Molded Plastic - Terminals : Solderable per MIL-STD-750,Method 2026 INTERNAL SCHEMATIC DIAGRAM Drain ORDERING INFORMATION TYPE PJP10N60 PJF10N60 MARKING P10N60 PACKAGE TO-220AB ITO-220AB PACKING Gate 50PCS/TUBE 50PCS/TUBE Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA ME TE R D ra i n-S o urc e Vo lta g e Ga te -S o urc e Vo lta g e C o nti nuo us D ra i n C urre nt P uls e d D ra i n C urre nt 1 ) Ma xi mum P o we r D i s s i p a ti o n D e ra ti ng F a c to r T A =2 5 O C S ymb o l V DS V GS ID ID M PD T J ,T S TG E AS R θJC R θJA P J P 1 0 N6 0 P J F 1 0 N6 0 Uni ts V...