F10N65
F10N65 is 650V N-Channel Enhancement Mode MOSFET manufactured by PanJit Semiconductor.
FEATURES
- 10A , 650V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A
TO-220AB / ITO-220AB TO-220AB
- Low ON Resistance
- Fast Switching
- Low Gate Charge
- Fully Characterized Avalanche Voltage and Current
- Specially Desigened for AC Adapter, Battery Charge and SMPS
- In pliance with EU Ro Hs 2002/95/EC Directives
3 2
1D
ITO-220AB
3 D
MECHANICAL DATA
- Case: TO-220AB / ITO-220AB Molded Plastic
- Terminals : Solderable per MIL-STD-750,Method 2026
INTERNAL SCHEMATIC DIAGRAM
2 Drain
ORDERING INFORMATION
TYPE PJP10N65
MARKING P10N65
PJF10N65
PACKAGE TO-220AB ITO-220AB
PACKING 50PCS/TUBE 50PCS/TUBE
1 Gate
3 Source
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
PARAMETER
Symbol PJP10N65 PJF10N65
Drain-Source Voltage
VDS 650
Gate-Source Voltage
VGS +30
Continuous Drain...