PJ2301 Datasheet | PanJit Semiconductor

FEATURES - R, DS(ON) VGS@-1.8V,ID@-1.5A=200mΩ - RDS(ON), VGS@-4.5V,ID@-2.2A=105mΩ - Advanced Trench Process Technology - High Density Cell Design For Ultra Low On-Resistance - Specially Designed for DC/DC converters - Low gate charge - Lead free in pliance with EU Ro HS 2011/65/EU directive - Green molding pound as per IEC61249 Std. . (Halogen Free) MECHANICAL DATA - Case : SOT-23 Package - Terminals : Solderable per MIL-STD-750,Method 2026 - Approx. Weight: 0.0003 ounces, 0.0084 grams - Marking : 01 0.120(3.04) 0.110(2.80) 0.056(1.40) 0.047(1.20) 0.079(2.00) 0.070(1.80) 0.004(0.10) 0.000(0.00) 0.020(0.50) 0.013(0.35) 0.008(0.20) 0.003(0.08) 0.044(1.10) 0.035(0.90) 0.006(0.15)MIN. Maximum Ratings and Thermal Characteristics (TA=25OC unless otherwise noted ) PARAMETER S ym b o l Drain-Source Voltage V DS Gate-Source Voltage Continuous Drain Current (Notes 1) Pulsed Drain Current (Notes 1) S t e a d y- S ta t e S t e a d y- S ta t e t < 5s TA= 2 5 OC TA= 7 0 OC TA= 2 5 OC Power Dissipation (Notes 2) Typ i c a l The r ma l Re s i s ta nc e (No te s 1 ) TA= 2 5 OC TA= 7 0 OC V GS ID IDM P R θJA Typ i c a l The r ma l Re s i s ta nc e (No te s 1 ) RθJL Op e ra ti ng J unc ti o n a nd S to ra g e Te m p e ra tur e Ra ng e T ,T J...