PJ2306 Datasheet | PanJit Semiconductor

FEATURES - RDS(ON), VGS@10V,IDS@3.2A=65mΩ - RDS(ON), VGS@4.5V,IDS@2.8A=85mΩ - Advanced Trench Process Technology - High Density Cell Design For Ultra Low On-Resistance - Very Low Leakage Current In Off Condition - Specially Designed for Load Switch, PWM Applications - ESD Protected - ponent are in pliance with EU Ro HS 2002/95/EC directives MECHANICALDATA - Case: SOT-23 Package - Terminals : Solderable per MIL-STD-750,Method 2026 - Marking : 06 D 3 Top View 1 G 2 S Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA ME TE R D r a i n-S o urc e Vo lta g e Ga te -S o urc e Vo lta g e C o nti nuo us D ra i n C urre nt P uls e d D ra i n C ur re nt 1) S ym b o l V DS V GS ID ID M T A =2 5 O C T A =7 5 O C PD T J ,T S TG R θJ A L i mi t 30 +2 0 3 .2 16 1 .2 5 0 .7 5 -5 5 to + 1 5 0 100 Uni ts V V A A W M a xi m um P o we r D i s s i p a ti o n Op e ra ti ng J unc ti o n a nd S to ra g e Te m p e ra ture Ra ng e Junction-to Ambient Thermal Resistance(PCB mounted) 2 Note: 1. Maximum DC current limited by the package 2. Surface mounted on FR4 board, t < 5 sec C /W .. PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE June 03, 2010-REV.00 PAGE . 1 ELECTRICALCHARACTERISTICS P a r a m e te r S ta t i...