PJ4800 Datasheet | PanJit Semiconductor

FEATURES - RDS(ON), VGS@10V,IDS@8A=20mΩ - RDS(ON), VGS@5.0V,IDS@6A=31mΩ - Advanced Trench Process Technology - High Density Cell Design For Ultra Low On-Resistance - Specially Designed for DC/DC Converters - Fully Characterized Avalanche Voltage and Current - Pb free product : 99% Sn above can meet Ro HS environment substance directive request MECHANICALDATA - Case: SOIC-08 Package - Terminals : Solderable per MIL-STD-750D,Method 1036.3 - Marking : 4800 PIN Assignment 8 7 6 5 1. Source 2. Source 3. Source 4. Gate 5. Drain 6. Drain 7. Drain 8. Drain Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PARAMETER Drain-Source Voltage Gate-Source Voltage Continous Drain Current Pulsed Drain Current (1) Avalanche Energy L=0.1m H,I D=8A,VDD=25V Power Dissipation TC=25o C TC=75o C TC=25o C SYMBOL VDS VGS ID I DM EAS PD TJ,TSTG RΘJA VALUE 30 +20 8 32 3.2 3 2 -55 to +175 50 UNIT V V A A m J Operating Junction and Stroage Temperature Range Junction-to-Ambient Thermal Resistance(PCB Mounted)2 .. Note: 1. Maximum DC current limited by the package 2. Surface mounted on FR4 board, t < 10 sec o C o C/W PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE December 01.2009-REV.00 PAGE . 1 ELECTRICAL CHARACTERISTICS (Tc=25o C,Unless Otherwise Noted ) PA RA M E TE R S YM B O L T E S T C O N D IT IO N S M IN . T YP. MAX. U N IT S TA T IC D r a i n- S o ur c e B r e a k d o wn Vo lta g e V (BR)D S S V GS (TH) V GS = 0 V, I V D S = V GS ,...