PJ6694 Datasheet | PanJit Semiconductor

FEATURES - RDS(ON), VGS@10V,IDS@12A=12mΩ - RDS(ON), VGS@4.5V,IDS@10A=22mΩ - Advanced Trench Process Technology - High Density Cell Design For Ultra Low On-Resistance - Specially Designed for DC/DC Converters - Fully Characterized Avalanche Voltage and Current - Pb free product : 99% Sn above can meet Ro HS environment substance directive request MECHANICALDATA - Case: SOIC-08 Package - Terminals : Solderable per MIL-STD-750D,Method 1036.3 - Marking : 6694 Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA M E TE R D r a i n- S o ur c e Vo l t a g e G a t e - S o ur c e Vo l t a g e C o nt i nuo us D r a i n C ur r e nt P ul s e d D r a i n C ur r e nt 1) S ym b o l V DS V GS ID ID M T A = 2 5 OC T A = 7 5 OC PD T J , T S TG E AS RθJA Li mi t 25 +20 12 50 2 .5 1 .5 -5 5 to + 1 5 0 130 50 U ni t s V V A A W M a xi m um P o w e r D i s s i p a t i o n O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e Avalanche Energy with Single Pulse ID=23A, VDD=25V, L=0.5m H Junction-to Ambient Thermal Resistance(PCB mounted)2 C m J C /W Note: 1. Maximum DC current limited by the package 2. Surface mounted on FR4 board, t < 10 sec PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE STAD-JUN.19.2006 PAGE . 1 .. ELECTRICALCHARACTERISTICS P a ra me te r S ta ti c D r a i n- S o ur c e B r e a k d o w n Vo l t a g e G a t e Thr e s ho l d Vo l t a g e D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e Ze r o G a t e Vo l t a g e D r a i n C ur r e nt Gate Body Leakage Forward Transconductance D ynami c V D S = 1 5 V , ID = 1 2 A , V G S = 5 V To t a l G a t e C h a r g e Qg G a t e - S o ur c e C ha r g e G a t e - D r a i n C ha r g e Tu r n - O n D e l a y Ti m e Tu r n - O n R i s e Ti m e Tu r n - O f f D e l a y Ti m e Tu r n - O f f F a l l Ti m e In p u t C a p a c i t a n c e O ut p ut C...