PJD10P10A Datasheet | PanJit Semiconductor

Features - RDS(ON), VGS@-10V,ID@-5A<210mΩ - RDS(ON), VGS@-4.5V,ID@-3A<230mΩ - High switching speed - Improved dv/dt capability - Low Gate Charge - Low reverse transfer capacitance - Lead free in pliance with EU Ro HS 2011/65/EU directive. - Green molding pound as per IEC61249 Std. (Halogen Free) Mechanical Data - Case: TO-252 Package - Terminals: Solderable per MIL-STD-750, Method 2026 - Approx. Weight: 0.0104 ounces, 0.297grams TO-252 Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(Note 1) Power Dissipation Continuous Drain Current Power Dissipation Power Dissipation TC=25o C TC=100o C TC=25o C TC=25o C TC=100o C TA=25o C TA=70o C TA=25o C TA=70o C Operating Junction and Storage Temperature Range Typical Thermal resistance(Note 4,5) Junction to Case Junction to Ambient - Limited only By Maximum Junction Temperature SYMBOL VDS VGS ID IDM PD PD TJ,TSTG RθJC RθJA LIMIT -100 +20 -10 -6 -40 54 22 -2.0 -1.6 2.0 1.3 -55~150 2.3 62.5 UNITS V V W A A W o C o C/W July 21,2015-REV.00 Page...