PJD25N06A Datasheet | PanJit Semiconductor

Features - RDS(ON), VGS@10V,ID@15A<34mΩ - RDS(ON), VGS@4.5V,ID@10A<40mΩ - High switching speed - Improved dv/dt capability - Low reverse transfer capacitance - Lead free in pliance with EU Ro HS 2011/65/EU directive. - Green molding pound as per IEC61249 Std. (Halogen Free) Mechanical Data - Case : TO-252 Package - Terminals : Solderable per MIL-STD-750, Method 2026 - Approx. Weight : 0.0104 ounces, 0.297grams TO-252 Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(Note 1) Power Dissipation Continuous Drain Current TC=25o C TC=100o C TC=25o C TC=25o C TC=100o C TA=25o C TA=70o C Power Dissipation TA=25o C Power Dissipation TA=70o C Single Pulse Avalanche Energy (Note 6) Operating Junction and Storage Temperature Range Typical Thermal resistance(Note 4,5) Junction to Case Junction to Ambient - Limited only By Maximum Junction Temperature SYMBOL VDS VGS ID IDM PD PD EAS TJ,TSTG RθJC RθJA LIMIT 60 +20 25 16 100 40 16 5.5 4.4 2.0 1.3 24 -55~150 3.1 62.5 UNITS V...