PJD2NA60
PJD2NA60 is 600V N-Channel MOSFET manufactured by PanJit Semiconductor.
Features
- RDS(ON), VGS@10V,ID@1A<4.4Ω
- High switching speed
- Improved dv/dt capability
- Low Gate Charge
- Low reverse transfer capacitance
- Lead free in pliance with EU Ro HS 2011/65/EU directive.
- Green molding pound as per IEC61249 Std.
600 V
Current
2A
(Halogen Free)
Mechanical Data
- Case : TO-251AB ,TO-220AB, ITO-220AB, TO-252 Package
- Terminals : Solderable per MIL-STD-750, Method 2026
- TO-251AB Approx. Weight : 0.0104 ounces, 0.297grams
- TO-220AB Approx. Weight : 0.065 ounces, 1.859 grams
- ITO-220AB Approx. Weight : 0.056 ounces, 1.6 grams
- TO-252 Approx. Weight : 0.0104 ounces, 0.297grams o
Maximum Ratings and Thermal Characteristics (TA=25 C unless otherwise noted)
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulse Avalanche Energy Power Dissipation TC=25 C Derate above 25o C o (Note 1)
SYMBOL VDS VGS ID IDM 8 EAS PD TJ,TSTG
TO-251AB
TO-220AB
ITO-220AB
TO-252
UNITS V V A A
600 +30 2
115 34 44 0.27 0.35 -55~150 23 0.18 34 0.27 m J W W/ o C o
Operating Junction and Storage Temperature Range Thermal resistance Junction to Case Junction to Ambient
RθJC RθJA
3.67 110
2.84 62.5
5.43 120
3.67 110 o
C/W
- Limited only By Maximum Junction Temperature
March 10,2014-REV.00
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