Download PJD2NA90 Datasheet PDF
PanJit Semiconductor
PJD2NA90
PJD2NA90 is 900V N-Channel MOSFET manufactured by PanJit Semiconductor.
Features - RDS(ON), VGS@10V,ID@1A<6.4Ω - High switching speed - Improved dv/dt capability - Low Gate Charge - Low reverse transfer capacitance - Lead free in pliance with EU Ro HS 2011/65/EU directive. - Green molding pound as per IEC61249 Std. (Halogen Free) Mechanical Data ITO-220AB-F TO-220AB - Case : TO-251AB ,TO-220AB, ITO-220AB-F, TO-252 Package - Terminals : Solderable per MIL-STD-750, Method 2026 - TO-251AB Approx. Weight : 0.0104 ounces, 0.297grams - TO-220AB Approx. Weight : 0.0667 ounces, 1.89 grams - ITO-220AB-F Approx. Weight : 0.068 ounces, 2 grams - TO-252 Approx. Weight : 0.0104 ounces, 0.297grams Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER SYMBOL TO-251AB TO-220AB ITO-220AB-F TO-252 UNITS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulse Avalanche Energy (Note 1) Power Dissipation TC=25o C Derate above 25o C Operating Junction and Storage Temperature Range VDS VGS ID IDM EAS TJ,TSTG 50 0.4 900 +30 2 8 148 80...