PJD3NA50 Datasheet | PanJit Semiconductor

Features - RDS(ON), VGS@10V,ID@1.5A<3.2Ω - High switching speed - Improved dv/dt capability - Low Gate Charge - Low reverse transfer capacitance - Lead free in pliance with EU Ro HS 2011/65/EU directive. - Green molding pound as per IEC61249 Std. (Halogen Free) Mechanical Data - Case : TO-251AB , TO-252 Package - Terminals : Solderable per MIL-STD-750, Method 2026 - TO-251AB Approx. Weight : 0.0104 ounces, 0.297grams - TO-252 Approx. Weight : 0.0104 ounces, 0.297grams TO-252 TO-251AB Maximum Ratings and Thermal Characteristics (TA=25o C unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulse Avalanche Energy (Note 1) Power Dissipation TC=25o C Derate above 25o C VDS VGS ID IDM EAS Operating Junction and Storage Temperature Range TJ,TSTG Typical Thermal resistance - Junction to Case - Junction to Ambient RθJC RθJA - Limited only By Maximum Junction Temperature TO-251AB 34 0.27 500 +30 3 12...