PJD4NA90
PJD4NA90 is 900V N-Channel MOSFET manufactured by PanJit Semiconductor.
Features
- RDS(ON), VGS@10V,ID@2A<3.4Ω
- High switching speed
- Improved dv/dt capability
- Low Gate Charge
- Low reverse transfer capacitance
- Lead free in pliance with EU Ro HS 2011/65/EU directive.
- Green molding pound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
ITO-220AB-F
TO-220AB
TO-252AA
TO-251AA
- Case: TO-251AA,TO-252AA ,TO-220AB, ITO-220AB-F Package
- Terminals : Solderable per MIL-STD-750, Method 2026
- TO-251AA Approx. Weight : 0.0104 ounces, 0.297grams
- TO-252AA Approx. Weight : 0.0104 ounces, 0.297grams
- TO-220AB Approx. Weight : 0.065 ounces, 1.859 grams
- ITO-220AB-F Approx. Weight : 0.068 ounces, 1.945 grams
Maximum
Ratings and
Thermal
Characteristics o
(TA=25 C unless otherwise noted)
PARAMETER
SYMBOL TO-251AA
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulse Avalanche Energy (Note 1)
Power Dissipation
TC=25o C Derate above 25o C
Operating Junction and
Storage Temperature Range
Typical Thermal resistance
- Junction to Case
- Junction to Ambient
VDS VGS ID IDM EAS...