PJD50N10AL
PJD50N10AL is 100V N-Channel Enhancement Mode MOSFET manufactured by PanJit Semiconductor.
Features
- RDS(ON) , VGS@10V, ID@20A<25mΩ
- RDS(ON) , VGS@4.5V, ID@15A<28.5mΩ
- Advanced Trench Process Technology
- High density cell design for ultra low on-resistance
- Lead free in pliance with EU Ro HS 2011/65/EU directive.
- Green molding pound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
TO-252
- Case : TO-252 Package
- Terminals : Solderable per MIL-STD-750, Method 2026
- Approx. Weight : 0.0104 ounces, 0.297grams
Maximum
Ratings and
Thermal
Characteristics o
(TA=25 C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TC=25o C TC=100o C
Pulsed Drain Current (Note 1)
TC=25o C
Power Dissipation
TC=25o C TC=100o C
Continuous Drain Current
TA=25o C TA=70o C
Power Dissipation
TA=25o C
Power Dissipation
TA=70o C
Single Pulse Avalanche Energy (Note 6)
Operating Junction and Storage Temperature Range
Typical Thermal Resistance(Note 4,5)
Junction to Case Junction to Ambient
- Limited only By Maximum Junction Temperature
SYMBOL VDS VGS ID IDM...
